Adjustable anisotropy in ferromagnetic (Ga,Mn) (As,P) layered alloys
Résumé
We show that the extension of the widely studied GaMnAs system to quaternary Ga(1-x)Mn(x)As(1-y)P(y) alloys allows to change and inverse the Mn doping induced uniaxial strain and thus the uniaxial magnetocrystalline anisotropy fields. In particular for typical Mn concentrations of x=0.07 the Mn dopant induced strain can be completely compensated by phosphorous alloying in the y=0.06 range and layers with both in-plane or out-of-plane easy axes of magnetizations with extremely low barriers for magnetization switching can be obtained.