Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100) GaAs thin films
Résumé
Phosphorous alloying in the y=0.06 range allows to engineer ferromagnetic Ga1-xMnxAs1-yPy/(100) GaAs thin films with standard x=0.07 Mn doping in which the easy axes of magnetization can be changed from in-plane to out-of-plane by a small (10 K) temperature rise. Ferromagnetic resonance investigations show the reorientation to be induced by the different temperature dependence of the cubic and uniaxial anisotropy constants. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3353997]