Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics
Résumé
The present work demonstrates the possibility to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures, including nanoscaled ones. The structures are grown from Ga - and GaIn - melts containing polycrystalline GaN as a nitrogen source. The red shift of the absorption spectra corresponds to nitrogen content in the epitaxial layers near or less than 0.2 at %. Photoluminescence spectra of dilute nitride GaAsN and GaInAsN show emission from localized nitrogen states - N-nanoclusters of more than two N atoms. These studies show that the melt grown dilute GaAsN and GaInAsN nanostructures can be used for solar cells with extended long wavelength edge. (C) 2010 Published by Elsevier Ltd
Domaines
Matière Condensée [cond-mat]Origine | Publication financée par une institution |
---|
Loading...