Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics - Archive ouverte HAL
Article Dans Une Revue Energy Procedia Année : 2010

Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics

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The present work demonstrates the possibility to use liquid phase epitaxy to incorporate nitrogen in epitaxial GaAsN/GaAs and GaInAsN/GaAs heterostructures, including nanoscaled ones. The structures are grown from Ga - and GaIn - melts containing polycrystalline GaN as a nitrogen source. The red shift of the absorption spectra corresponds to nitrogen content in the epitaxial layers near or less than 0.2 at %. Photoluminescence spectra of dilute nitride GaAsN and GaInAsN show emission from localized nitrogen states - N-nanoclusters of more than two N atoms. These studies show that the melt grown dilute GaAsN and GaInAsN nanostructures can be used for solar cells with extended long wavelength edge. (C) 2010 Published by Elsevier Ltd
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hal-01236814 , version 1 (03-12-2015)

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M. Milanova, G. Koleva, R. Kakanakov, P. Vitanov, E. Goranova, et al.. Investigation of melt-grown dilute GaAsN and GaInAsN nanostructures for photovoltaics. Energy Procedia, 2010, Energy Procedia, 2 (1), pp.165-168. ⟨10.1016/j.egypro.2010.07.023⟩. ⟨hal-01236814⟩
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