Photocarrier-induced reduction of the lifetime of acoustic phonons in semiconductor superlattices - Archive ouverte HAL
Article Dans Une Revue Chinese Journal of Physics Année : 2011

Photocarrier-induced reduction of the lifetime of acoustic phonons in semiconductor superlattices

Résumé

We present an experimental analysis of the role of the electron-phonon interaction in the lifetime of coherent longitudinal acoustic phonons in a sample based on the GaAs/AlAs superlattice structure. Sub-terahertz phonons are generated and detected through an ultra-fast pump-probe technique. In order to supply with different scenarios for the electron-phonon interaction, two experimental configurations are proposed, either with a high or a nil density of photo-excited carriers in the spatial region where the phonon detection takes place. We observe a one-order-of-magnitude reduction in the phonon lifetime in the first case with respect to the second.
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Dates et versions

hal-01233826 , version 1 (25-11-2015)

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  • HAL Id : hal-01233826 , version 1

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Maria Florencia Pascual-Winter, Alejandro Fainstein, Bernard Jusserand, Bernard Perrin, Aristide Lemaitre. Photocarrier-induced reduction of the lifetime of acoustic phonons in semiconductor superlattices. Chinese Journal of Physics, 2011, 49 (1, SI), pp.250-258. ⟨hal-01233826⟩
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