Thermal conductivity of silicon nitride membranes is not sensitive to stress - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2015

Thermal conductivity of silicon nitride membranes is not sensitive to stress

Résumé

We have measured the thermal properties of suspended membranes from 10 K to 300 K for two amplitudes of internal stress (about 0.1 GPa and 1 GPa) and for two different thicknesses (50 nm and 100 nm). The use of the original 3ω-Volklein method has allowed the extraction of both the specific heat and the thermal conductivity of each SiN membrane over a wide temperature range. The mechanical properties of the same substrates have been measured at helium temperatures using nanomechanical techniques. Our measurements show that the thermal transport in freestanding SiN membranes is not affected by the presence of internal stress. Consistently, mechanical dissipa
Fichier principal
Vignette du fichier
main_v3.pdf (4.81 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-01231839 , version 1 (25-11-2015)

Identifiants

Citer

Hossein Ftouni, Christophe Blanc, Dimitri Tainoff, Andrew Fefferman, Martial Defoort, et al.. Thermal conductivity of silicon nitride membranes is not sensitive to stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 92 (12), pp.125439. ⟨10.1103/PhysRevB.92.125439⟩. ⟨hal-01231839⟩

Collections

UGA CNRS NEEL
155 Consultations
1704 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More