Evaluation of Fine Structure of Excitonic Levels in InGaAs/InAs/GaAs Quantum Dots with the Detection Energy
Résumé
We have studied the fine structure in self-organized InGaAs/InAs/GaAs quantum dots. We have used the longitudinal magnetic field dependence of the circular polarization; this study allows us to calculate the exchange splitting. We have found that this splitting increases from 105 to 150 mu eV with increasing the detection energy. This increase has been interpreted by the fact that the splitting is essentially due to the anisotropic shape in this quantum dots.