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Article Dans Une Revue Journal of Physics: Condensed Matter Année : 2013

The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films

Résumé

The magnetic anisotropy of the ferromagnetic semiconductor (Ga, Mn) (As, P) is studied in a material-specific microscopic k . p approach. We calculate the electronic energy band structure of (Ga, Mn) (As, P) quaternary ferromagnetic alloys using a 40-band k . p model and taking into account the s, p-d exchange interaction and the strain of the (Ga, Mn) (As, P) layer on a GaAs substrate. We determine the variations of the carrier effective masses in the strained (Ga, Mn) (As, P)/GaAs system. The magnetic anisotropy constants obtained from our simulations using a mean-field model are compared with the experimental ones determined by ferromagnetic resonance spectroscopy on a set of samples with constant manganese concentration and varying phosphorus concentration. An excellent quantitative agreement between experiment and theory is found for the uniaxial out-of-plane and cubic in-plane anisotropy parameters.
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Dates et versions

hal-01229173 , version 1 (10-12-2015)

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M. Yahyaoui, K. Boujdaria, M. Cubukcu, Christophe Testelin, Catherine Gourdon. The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films. Journal of Physics: Condensed Matter, 2013, 25 (34), pp.346001. ⟨10.1088/0953-8984/25/34/346001⟩. ⟨hal-01229173⟩
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