Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer - Archive ouverte HAL
Article Dans Une Revue Journal of Magnetism and Magnetic Materials Année : 2013

Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer

Résumé

Vibrating Sample Magnetometer measurements were performed on a ferromagnetic (Ga,Mn)As thin film. We report Curie temperature (T-c) up to 142 K in an annealed 200 nm GaMnAs layer. This result is remarkable and comparable with the T-c obtained in GaMnAs for small thicknesses t < 50 nm. Our result reveals the high quality of the sample albeit the presence of 3 different chemical species, and a large thickness. After comparison with previous work obtained in GaMnAs, we show that for film of up to t=200 nm the out diffusion based annealing process is not thickness limited.
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Dates et versions

hal-01229172 , version 1 (14-12-2015)

Identifiants

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H. Riahi, W. Ouerghui, L. Thevenard, Catherine Gourdon, M.A. Maaref, et al.. Annealing effect on the magnetization reversal and Curie temperature in a GaMnAs layer. Journal of Magnetism and Magnetic Materials, 2013, 342, pp.149-151. ⟨10.1016/j.jmmm.2013.04.034⟩. ⟨hal-01229172⟩
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