Excitation-Induced Dephasing in a Resonantly Driven InAs/GaAs Quantum Dot - Archive ouverte HAL Access content directly
Journal Articles Physical Review Letters Year : 2013

Excitation-Induced Dephasing in a Resonantly Driven InAs/GaAs Quantum Dot

Abstract

We report on coherent emission of the neutral exciton state in a single semiconductor self-assembled InAs/GaAs quantum dot embedded in a one-dimensional waveguide, under resonant picosecond pulsed excitation. Direct measurements of the radiative lifetime and coherence time are performed as a function of excitation power and temperature. The characteristic damping of Rabi oscillations observed is attributed to an excitation-induced dephasing due to a resonant coupling between the emitter and the acoustic phonon bath of the matrix. Other sources responsible for the decrease of the coherence time have been evidenced, in particular an enhancement of the radiative recombination rate due to the resonant strong coupling between the dot and the one-dimensional optical mode. As a consequence, the emission couples very efficiently into the waveguide mode, leading to an additional relaxation term of the excited-state population.

Dates and versions

hal-01229170 , version 1 (16-11-2015)

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Leonard Monniello, Catherine Tonin, Richard Hostein, Aristide Lemaitre, Anthony Martinez, et al.. Excitation-Induced Dephasing in a Resonantly Driven InAs/GaAs Quantum Dot. Physical Review Letters, 2013, 111 (2), pp.026403. ⟨10.1103/PhysRevLett.111.026403⟩. ⟨hal-01229170⟩
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