Micro-Raman study of GaAs nanowires
Résumé
In GaAs nanowires, the effective Raman tensor is dominated by dielectric anisotropy leading to similar angular variations of allowed TO and forbidden LO phonon scattering from both zinc blende and wurtzite crystalline symmetry. Resonant Raman scattering studies give evidence of a novel excitonic transition in wurtzite wires at 90 meV above to the lowest exciton in zinc blende ones in agreement with recent theoretical predictions.