Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions - Archive ouverte HAL
Journal Articles Journal of Applied Physics Year : 2015

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions

C. B. Lim
Nanophysique et Semiconducteurs
CV
M. Beeler
  • Function : Author
Nanophysique et Semiconducteurs
A. Ajay
  • Function : Author
Nanophysique et Semiconducteurs
J. Lähnemann
  • Function : Author
E. Bellet-Amalric
Nanophysique et Semiconducteurs
C. Bougerol
Nanophysique et Semiconducteurs
E. Monroy
Nanophysique et Semiconducteurs

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Materials Science [cond-mat.mtrl-sci]

Catherine Bougerol  : Connect in order to contact the contributor

https://hal.science/hal-01226733

Submitted on : Tuesday, November 10, 2015-9:11:45 AM

Last modification on : Tuesday, September 3, 2024-11:14:08 AM

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hal-01226733 , version 1 (10-11-2015)

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C. B. Lim, M. Beeler, A. Ajay, J. Lähnemann, E. Bellet-Amalric, et al.. Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short- and mid-wavelength infrared regions. Journal of Applied Physics, 2015, 118 (1), pp.014309. ⟨10.1063/1.4926423⟩. ⟨hal-01226733⟩

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