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Poster De Conférence Année : 2015

Switching and oscillations in vanadium dioxide based devices for neuromorphic function implementation

Arnaud Beaumont
Alexander Pergament
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Aurelian Crunteanu

Résumé

Nowadays information processing is widely performed by CMOS circuits on the base of Boolean logics whose capabilities appear to be close to its immanent limit related to the sequential nature of computation. The multi-core trend in microprocessors may indicate that this bottleneck is reached and that it is time to think of intrinsically parallel computation architectures. An alternative approach is connected with neural networks. Since there are different kinds of neurons operating with different mechanisms, many bioinspired computation architectures have been proposed. Among them oscillatory neural networks (ONNs) have attracted much attention because the basic bricks are oscillators. An oscillator may be fabricated by many different ways with common electronic devices, most of the time with quite large circuits. However it has been shown that a simple capacitor made of an insulator featuring Metal-Insulator-Transition (MIT) can oscillate between a high-resistance and a low-resistance state when an appropriate bias is applied to it. This means that the basic block of ONNs can be very small, which explains the attractivity of such circuits for large integration. In this work we report on the study of relaxation oscillations in circuits with VO2-based two-terminal devices. The switching effect in vanadium dioxide is associated with the MIT occurring in this material either upon heating to Tt = 340 K or under the action of an electric field. The results presented demonstrate the influence of coupling strength on the behaviour of pairs of oscillators.
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Dates et versions

hal-01226188 , version 1 (09-11-2015)

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  • HAL Id : hal-01226188 , version 1

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Arnaud Beaumont, Jean-Christophe Orlianges, Alexandre Boulle, Alexander Pergament, Aurelian Crunteanu. Switching and oscillations in vanadium dioxide based devices for neuromorphic function implementation. Workshop on Oxide Electronics, WOE 22, College de France, Paris - October 7-9, 2015, Oct 2015, Paris, France. ⟨hal-01226188⟩
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