Antiferromagnetic phase of the gapless semiconductor V3Al - Archive ouverte HAL
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2015

Antiferromagnetic phase of the gapless semiconductor V3Al

Abstract

Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices without fringing magnetic fields. TheAF gapless semiconducting D03 phase ofV3Alwas successfully synthesized via arc-melting and annealing. The AF properties were established through synchrotron measurements of the atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization, x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapl
Fichier principal
Vignette du fichier
1502.07318.pdf (2.77 Mo) Télécharger le fichier
Origin Files produced by the author(s)

Dates and versions

hal-01219320 , version 1 (07-09-2023)

Identifiers

Cite

M. E. Jamer, Badih Assaf, G. E. Sterbinsky, D. Arena, L. H. Lewis, et al.. Antiferromagnetic phase of the gapless semiconductor V3Al. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2015, 91 (9), pp.094409. ⟨10.1103/PhysRevB.91.094409⟩. ⟨hal-01219320⟩
209 View
20 Download

Altmetric

Share

More