Antiferromagnetic phase of the gapless semiconductor V3Al
Abstract
Discovering new antiferromagnetic (AF) compounds is at the forefront of developing future spintronic devices
without fringing magnetic fields. TheAF gapless semiconducting D03 phase ofV3Alwas successfully synthesized
via arc-melting and annealing. The AF properties were established through synchrotron measurements of the
atom-specific magnetic moments, where the magnetic dichroism reveals large and oppositely oriented moments on
individual V atoms. Density functional theory calculations confirmed the stability of a type G antiferromagnetism
involving only two-thirds of the V atoms, while the remaining V atoms are nonmagnetic. Magnetization,
x-ray diffraction, and transport measurements also support the antiferromagnetism. This archetypal gapl
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Physics [physics]Origin | Files produced by the author(s) |
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