Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure
Résumé
We report the 3D mapping of strain and tilts of crystal planes in an extended InP nanostructured layer bonded onto silicon, measured without sample preparation. Our approach takes advantages of 3D x-ray Bragg ptychography combined to an optimized inversion process. The excellent agreement with the sample nominal structure validates the reconstruction while the evidence of spatial fluctuations hardly observable by other means, underlines the specificities of Bragg ptychography.
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