High Speed Phase Modulator Driver Unit in 55 nm SiGe BiCMOS for a Single-Channel 100 Gb/s NRZ Silicon Photonic Modulator - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2015

High Speed Phase Modulator Driver Unit in 55 nm SiGe BiCMOS for a Single-Channel 100 Gb/s NRZ Silicon Photonic Modulator

Résumé

In this paper, a silicon integrated driver unit, intended for a single-channel NRZ 3D heterogeneous silicon photonic modulator is proposed. It allows data rate of up to 100 Gb/s, which is beyond the current state of the art. It directly controls 160 GHz bandwidth high speed phase modulator (HSPM) segment of a Mach Zehnder Interferometer (MZI). It is fabricated in 55 nm SiGe BiCMOS technology with fT of up to 300 GHz. It features a 300 mW of dc power consumption and delivers a 2.5 Vpp single-ended output swing at 100 Gb/s.
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Dates et versions

hal-01218287 , version 1 (20-10-2015)

Identifiants

  • HAL Id : hal-01218287 , version 1

Citer

Jeremie Prades, Anthony Ghiotto, Denis Pache, Eric Kerherve. High Speed Phase Modulator Driver Unit in 55 nm SiGe BiCMOS for a Single-Channel 100 Gb/s NRZ Silicon Photonic Modulator. 45rd IEEE European Microwave Conference (EuMC), Sep 2015, Paris, France. ⟨hal-01218287⟩
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