Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition

M.K.S. Barr; L. Assaud; Y. Wu; C. Laffon; Ph. Parent; J. Bachmann; L. Santinacci

Journal Articles Electrochimica Acta Year : 2015

Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition

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1

M.K.S. Barr

Function : Author

Centre Interdisciplinaire de Nanoscience de Marseille

L. Assaud

Function : Author

Centre Interdisciplinaire de Nanoscience de Marseille

Y. Wu

Function : Author
PersonId : 755339
ORCID : 0000-0002-2039-0590

Centre Interdisciplinaire de Nanoscience de Marseille

C. Laffon

Function : Author

Centre Interdisciplinaire de Nanoscience de Marseille

Ph. Parent

Function : Author

Centre Interdisciplinaire de Nanoscience de Marseille

J. Bachmann

Function : Author

L. Santinacci

Function : Author
PersonId : 18423
IdHAL : lionel-santinacci
ORCID : 0000-0002-7250-0704
IdRef : 202394018

Centre Interdisciplinaire de Nanoscience de Marseille

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Physics [physics]

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Submitted on : Wednesday, October 14, 2015-2:58:14 PM

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hal-01215572 , version 1 (14-10-2015)

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HAL Id : hal-01215572 , version 1

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M.K.S. Barr, L. Assaud, Y. Wu, C. Laffon, Ph. Parent, et al.. Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition. Electrochimica Acta, 2015, 179, pp.504-511. ⟨hal-01215572⟩

Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition

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