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Article Dans Une Revue Electrochimica Acta Année : 2015

Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition

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hal-01215572 , version 1 (14-10-2015)

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  • HAL Id : hal-01215572 , version 1

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M.K.S. Barr, L. Assaud, Y. Wu, C. Laffon, Ph. Parent, et al.. Engineering a three-dimensional, photoelectrochemically active p-NiO/i-Sb2S3 junction by atomic layer deposition. Electrochimica Acta, 2015, 179, pp.504-511. ⟨hal-01215572⟩
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