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Communication Dans Un Congrès Année : 2004

Stress Metrology : The challenge for the next generation of engineered wafers

Antoine Tiberj
Cécile Aulnette
  • Fonction : Auteur
Nicolas Daval
  • Fonction : Auteur
Myriam Moreau
Mark Kennard
  • Fonction : Auteur
Ian Cayrefourcq
  • Fonction : Auteur
Konstantin K. Bourdelle
  • Fonction : Auteur

Résumé

Raman spectroscopy is a powerful and versatile technique for stress measurements in complex stacks of thin crystalline layers at macroscopic and microscopic scales. Using such a technique we show that thick SiGe layers epitaxially grown using graded buffer method are fully relaxed (>95%) at a macroscopic scale but exhibit a small strain modulation at a microscopic scale. For the first time we report the results of Raman micro-mapping of stress distribution in SGOI wafers produced by Smart Cut TM technology. We conclude that Smart Cut TM is a unique method to manufacture the next generation of engineered wafers that can combine strained and/or relaxed SiGe alloys, Si and Ge films, while keeping their initial strain properties at both scales. It is important to develop Raman spectroscopy tool for in-line process control in fabrication of strained Silicon On Insulator (sSOI) wafers.
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hal-01213510 , version 1 (22-09-2023)

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Antoine Tiberj, Vincent Paillard, Cécile Aulnette, Nicolas Daval, Myriam Moreau, et al.. Stress Metrology : The challenge for the next generation of engineered wafers. MRS Spring Meeting Symposium B: High-Mobility Group-IV Materials and Devices, Apr 2004, San Francisco, United States. pp.B3.1, ⟨10.1557/PROC-809-B3.1⟩. ⟨hal-01213510⟩
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