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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2014

Magnetoresistance of disordered graphene: From low to high temperatures

Abstract

We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from T=1.7 K up to room temperature. The MR exhibits a maximum in the temperature range 120–240 K. The maximum is observed at intermediate magnetic fields (B=2–6 T), in between the weak localization and the Shubnikov-de Haas regimes. It results from the competition of two mechanisms. First, the low-field magnetoresistance increases continuously with T and has a purely classical origin. This positive MR is induced by thermal averaging and finds its physical origin in the energy dependence of the mobility around the Fermi energy. Second, the high-field negative MR originates from the electron-electron interaction (EEI). The transition from the diffusive to the ballistic regime is observed. The amplitude of the EEI correction points towards the coexistence of both long- and short-range disorder in these samples.
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Dates and versions

hal-01208536 , version 1 (08-06-2021)

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Bilal Jabakhanji, D. Kazazis, Wilfried Desrat, A. Michon, M. Portail, et al.. Magnetoresistance of disordered graphene: From low to high temperatures. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (3), pp.035423. ⟨10.1103/PhysRevB.90.035423⟩. ⟨hal-01208536⟩
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