Undoped and Neodymium-doped gallium oxide (Ga2O3) thin films of about 500 nm thickness were successfully grown at different temperatures ranging from 100 up to 600 °C by radiofrequency magnetron sputtering. Post-annealing treatments were carried out at 900 °C and 1000 °C. The obtained films were (400) textured and a grain size of a few tens of nanometres was found. Optical and electrical characterizations led to a figure of merit of about 1.9 × 10–4. These films were successfully doped with Neodymium by a co-sputtering method. The photoluminescence experiments for the Nd-doped β-Ga2O3 films clearly showed the rare-earth emitting signature.