Robustness of SiC MOSFETs in short-circuit mode
Résumé
This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFET submitted to current limitation or short-circuit operations. MOSFETs from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFET under short-circuit.
Domaines
Sciences de l'ingénieur [physics]
Origine : Fichiers produits par l'(les) auteur(s)
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