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Communication Dans Un Congrès Année : 2015

Robustness of SiC MOSFETs in short-circuit mode

Résumé

This paper presents experimental robustness tests of Silicon Carbide (SiC) MOSFET submitted to current limitation or short-circuit operations. MOSFETs from different manufacturers have been tested and show different failure modes. A gate leakage current is detected before failure but is not necessarily responsible for the failure. For some tested devices, the failure appears in an open state mode after physical short-circuit between gate and source. The main failure mode is nevertheless a physical short-circuit between drain and source. However, the various tests show, despite the gate leakage current, excellent robustness of the various tested SiC MOSFET under short-circuit.
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Dates et versions

hal-01196528 , version 1 (15-09-2015)

Identifiants

  • HAL Id : hal-01196528 , version 1

Citer

Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickaël Petit, Cyril Buttay, et al.. Robustness of SiC MOSFETs in short-circuit mode. PCIM Europe 2015, May 2015, Nuremberg, Germany. ⟨hal-01196528⟩
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