An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET
Résumé
Among wide band gap material for power electronic, Silicon Carbide (SiC) is the most advanced and starts to gain market shares. We have studied planar SiC MESFET ESD robustness. To solve the problem of their low intrinsic ESD robustness, we demonstrate in this work an effective protection solution and possible improvements.
Domaines
Electronique
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An Electrostatic-Discharge-Protection Solution for Silicon Carbide MESFET _TanguyPhulpin2.pdf (2.46 Mo)
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