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Article Dans Une Revue Information Technology Année : 2014

Testing for Gate Oxide Short Defects using the Detectability Interval Paradigm

Résumé

This paper addresses the detection improvement of Gate Oxide Short defect using a delay test strategy. To achieve this objective, the concept of detectabil-ity interval is first introduced in the context of detec-tion of short defects using Boolean test technique. Then this paradigm is extended to the detection of Gate Oxide Short defects using delay testing. Final-ly, it is shown that it is possible to significantly im-prove the detection of this kind of defect.
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Dates et versions

hal-01167054 , version 1 (23-06-2015)

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Jean-Marc J.-M. Galliere, Florence Azaïs, Mariane Comte, Michel Renovell. Testing for Gate Oxide Short Defects using the Detectability Interval Paradigm. Information Technology, 2014, 56 (4), pp.173-181. ⟨10.1515/itit-2013-1040⟩. ⟨hal-01167054⟩
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