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Communication Dans Un Congrès Année : 2014

Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversion

Résumé

We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ is estimated as a function of the excitation power. High value of Δμ is found as well as high carrier temperature. These results are compared to electrical measurements
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Dates et versions

hal-01166784 , version 1 (23-06-2015)

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  • HAL Id : hal-01166784 , version 1

Citer

Jean Rodière, Laurent Lombez, Jean-Francois Guillemoles, Hervé Folliot, Alain Le Corre, et al.. Characterization of InP/InGaAsP-multi-quantum-wells heterostructures for high efficiency solar energy conversion. Compound Semiconductor Week 2014 - 41st International Symposium on Compound Semiconductors (ISCS 2014), May 2014, Montpellier, France. ⟨hal-01166784⟩
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