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Communication Dans Un Congrès Année : 2015

Near-Field Injection At Die Level

Résumé

Near-field injection is a promising method in order to induce local faults in integrated circuits. This paper aims at proposing a model of the coupling between the injection probe and the circuit under test. This study relies on measurements performed on a test chip by on-chip voltage sensors. I. INTRODUCTION Near-field injection constitutes a promising method for various applications such as electromagnetic attacks on secured circuits or investigations of integrated circuits (ICs) susceptibility to electromagnetic disturbances [1]. The injection at die level offers the advantage to locate precisely the origin of the faults induced by the coupling of the near-field disturbance. This paper attempts to clarify the nature of the coupling between the injection probe and the circuit under test by the development of a model of the coupling. This study relies on near-field injection measurements performed on a test chip which integrates several on-chip voltage sensors for accurate characterization in high frequency of the voltage induced along circuit interconnects.
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Dates et versions

hal-01159220 , version 1 (04-06-2015)

Identifiants

  • HAL Id : hal-01159220 , version 1

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Alexandre Boyer, B Vrignon, Manuel Cavarroc, J Shepherd. Near-Field Injection At Die Level. Asia-Pacific International EMC Symposium 2015, May 2015, Taipei, Taiwan. ⟨hal-01159220⟩
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