Development of a New Methodology for Modeling the PV Generator Behavior in the Presence of Open-Circuit and Short-Circuit Faults - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Development of a New Methodology for Modeling the PV Generator Behavior in the Presence of Open-Circuit and Short-Circuit Faults

Résumé

— In this paper, we proposed a new methodology for the faults photovoltaic generator modeling, especially when it subjected to the open-circuit and short-circuit faults at its components: cells, bypass diodes and blocking diodes. The highlight of the proposed algorithm focused on the mathematical modeling that based on known electrical laws, of the IV characteristic of the faulty PV generator. This model is able to develop a rich database , containing six electrical faults types, which can uses in the diagnosis area of the photovoltaic generators. NOMENCLATURE I_SRC = String Reversed Current. I_SSC = String Supplied Current. I_Cell = Cell Current. V_Cell = Cell Voltage. I_Cell_Short_Circuit = Cell Short Circuit Current. V_Cell_Open_Circuit = Cell Open Circuit Voltage. nc = Cells Number. I_Group = Group Current. V_Group = Group Voltage. I_Bypass_Diode = Bypass Diode Current. ng = Groups Number. I_Module = Module Current. V_Module = Module Voltage. nm = Modules Number. I_String = String Current. V_String = String Voltage. ns = Strings Number. I_PV = Generator Current. V_PV = Generator Voltage. PHI = Photo-Current. I 0 = Reverse Saturation Current. DTV = Diode Thermal Voltage. a = Diode Ideality Factor. R S = Cell Series Resistance. R SH = Cell Shunt Resistance. V / I = Voltage / Current. V imposed = Voltage Imposed.
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Dates et versions

hal-01154202 , version 1 (21-05-2015)

Identifiants

  • HAL Id : hal-01154202 , version 1

Citer

Wail Rezgui, Nadia Kinza Mouss, Leïla-Hayet Mouss, Mohamed Djamel Mouss, Yassine Amirat, et al.. Development of a New Methodology for Modeling the PV Generator Behavior in the Presence of Open-Circuit and Short-Circuit Faults. 2014 IEEE EFEA, Nov 2014, Paris, France. pp.1-6. ⟨hal-01154202⟩
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