Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor
Résumé
Our work is to create a three-dimensional Simulator (3D) used for the study
of the components to low geometry of design, and to determine in the
volume structure the potential distributions and densities of free carriers in
bias voltage given by solving the system of Poisson and two continuities
equations. The initial version can simulate components of lifetime
semiconductor. In this study, we make a comparison between the lifetime
and relaxation semiconductor in the conduction mode. In order to create a
larger Simulator, we'll perform a calculation by varying am bipolar lifetime
way to move from lifetime semiconductor to relaxation semiconductor. We
consider the case corresponding at two different values of diffusion lifetime
τ0 which is corresponding to a measured lifetime in current transport. The
method of resolution consists to linearization of the equations transport by
the finite differences method. The algorithm for solving linear and strongly
coupled equations deduced from the physical model is the Newton-Raphson.
However, in order to allow a better convergence and consequently an
improvement of time computing 3D, a method combined, incorporating the
Newton algorithm and the Gummel method was developed. PIN diodes are
used for test of the simulation model.