Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor
Résumé
Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling,
starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3
materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 C. The
structural, compositional, morphological and optical properties of the synthesized semiconductor have
been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron
microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal
structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films
showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore,
optical measurements showed that the deposited layers have a relatively high absorption
coefficient of 105 cm1 and present a band gap of 0.94 eV.