Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence - Archive ouverte HAL
Communication Dans Un Congrès Année : 2015

Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence

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Matériaux Micro et nanotechnologies/Microélectronique Optique / photonique

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https://hal.science/hal-01147488

Soumis le : jeudi 30 avril 2015-15:16:22

Dernière modification le : lundi 16 septembre 2024-17:52:04

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hal-01147488 , version 1 (30-04-2015)

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  • HAL Id : hal-01147488 , version 1

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K. Zelazna, M. Gladysiewicz, R. Kudrawiec, W. Walukiewicz, Samy Almosni, et al.. Electronic band structure and optical properties of GaNxPyAs1-x-y with y≥0.6 studied by electro-modulation spectroscopy and photoluminescence. Compound semiconductor week 2015, Jun 2015, Santa-Barbara, United States. ⟨hal-01147488⟩

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