Electroluminescence efficiencies of erbium in silicon-based hosts
Résumé
We report on room-temperature 1.5 lm electroluminescence from trivalent erbium (Er3þ) ions
embedded in three different CMOS-compatible silicon-based hosts: SiO2, Si3N4, and SiNx. We show
that although the insertion of either nitrogen or excess silicon helps enhance electrical conduction
and reduce the onset voltage for electroluminescence, it drastically decreases the external quantum
efficiency of Er3þ ions from 2% in SiO2 to 0.001% and 0.0004% in SiNx and Si3N4, respectively.
Furthermore, we present strong evidence that hot carrier injection is significantly more efficient than
defect-assisted conduction for the electrical excitation of Er3þ ions. These results suggest strategies
to optimize the engineering of on-chip electrically excited silicon-based nanophotonic light sources.
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