Enhancing The Optical And Electrical Properties of Si-based Nanostructured Materials - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Energy Procedia Année : 2011

Enhancing The Optical And Electrical Properties of Si-based Nanostructured Materials

Résumé

Multilayer structures of Si rich silicon oxide (SiOx) alternated with two types of dielectric sublayers viz. SiO2 or SiNx have been studied. An enhancement in the density of nanoclusters within the SiOx sublayer is achieved by using the reactive magnetron co-sputtering method. The effect of SiNx sublayer thickness on the photoluminescence properties is investigated. We succeed in enhancing the absorption and the pholuminescence properties of the multilayers by replacing SiO2 by SiNx sublayers. We also achieve a higher conductivity in SiOx/SiNx with an improved thermal budget. This preliminary study gives a deep insight to optimize materials for future solar cell device applications with enhanced properties at reduced thermal budget.
Fichier principal
Vignette du fichier
1-s2.0-S1876610211019965-main decopy.pdf (1.55 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-01139866 , version 1 (11-04-2017)

Identifiants

Citer

Ramesh Pratibha Nalini, Philippe Marie, Julien Cardin, Christian Dufour, Panagiotis Dimitrakis, et al.. Enhancing The Optical And Electrical Properties of Si-based Nanostructured Materials. Energy Procedia, 2011, European Materials Research Society ConferenceSymp. Advanced Inorganic Materials and Concepts for Photovoltaics, 10, pp.161-166. ⟨10.1016/j.egypro.2011.10.170⟩. ⟨hal-01139866⟩
324 Consultations
57 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More