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Communication Dans Un Congrès Année : 2015

Nitride-on-Silicon microdisks resonators for deep-UV laser emission at room-temperature

Résumé

Deep ultra-violet semiconductor lasers have numerous applications for optical storage, biochemistry or optical interconnects. UV-emitting ridge lasers usually embed nitride heterostructures grown on complex buffer layers or expensive substrates – an approach that cannot be extended to nano-photonics and microlasers. We demonstrate here the first deep ultra-violet microlaser operating at 275nm at room temperature under optical pumping. It is based on binary GaN/AlN thin quantum wells (QWs) grown on a silicon substrate and embedded in microdisk resonators. Those QWs indeed combine UV-C emission with a good emission efficency even at room temperature thanks to the huge band offset beetwen GaN and AlN. They form the active layer of state-of-the-art microdisk resonators, which electromagnetic modes, the so-called Whispering-Gallery Modes (WGMs), present a low modal volume and a high quality factor (Q=6000). This active layer can form free-standing membranes and is further compatible with future developments of nitride nanophotonic platforms on silicon.
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Dates et versions

hal-01132090 , version 1 (16-03-2015)

Identifiants

  • HAL Id : hal-01132090 , version 1

Citer

Julien Selles, Guillaume Cassabois, Thierry Guillet, Christelle Brimont, Philippe Boucaud, et al.. Nitride-on-Silicon microdisks resonators for deep-UV laser emission at room-temperature. SPIE Photonics West 2015, colloque 9357 « Physics and Simulation of Optoelectronic Devices XXIII », Feb 2015, San Francisco, United States. ⟨hal-01132090⟩
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