Atomistic Model for Ge Condensation under SiGe Oxidation - Archive ouverte HAL
Journal Articles Defect and Diffusion Forum Year : 2015

Atomistic Model for Ge Condensation under SiGe Oxidation

P. Ganster
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hal-01130906 , version 1 (12-03-2015)

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  • HAL Id : hal-01130906 , version 1

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P. Ganster, A. Saul, G. Tréglia. Atomistic Model for Ge Condensation under SiGe Oxidation. Defect and Diffusion Forum, 2015, 363, pp.210-216. ⟨hal-01130906⟩
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