Journal Articles
Defect and Diffusion Forum
Year : 2015
Hal Cinam : Connect in order to contact the contributor
https://hal.science/hal-01130906
Submitted on : Thursday, March 12, 2015-3:12:34 PM
Last modification on : Friday, March 24, 2023-2:53:00 PM
Dates and versions
Identifiers
- HAL Id : hal-01130906 , version 1
Cite
P. Ganster, A. Saul, G. Tréglia. Atomistic Model for Ge Condensation under SiGe Oxidation. Defect and Diffusion Forum, 2015, 363, pp.210-216. ⟨hal-01130906⟩
36
View
0
Download