Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics - Archive ouverte HAL
Communication Dans Un Congrès Année : 2015

Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics

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Electronique Micro et nanotechnologies/Microélectronique

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https://hal.science/hal-01121712

Soumis le : lundi 2 mars 2015-14:28:55

Dernière modification le : vendredi 24 mars 2023-14:53:00

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Dates et versions

hal-01121712 , version 1 (02-03-2015)

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  • HAL Id : hal-01121712 , version 1

Citer

R. Cherfi, Khalid Kandoussi, Nathalie . Coulon, Claude Simon, Tayeb Mohammed-Brahim. Correlation between quality and thickness of µc-Si film deposited below 180°C by PECVD and TFTS characteristics. Conference on Thin Film Transistors ITC 2015, Feb 2015, Rennes, France. ⟨hal-01121712⟩

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UNIV-NANTES UNIV-RENNES1 CNRS INSA-RENNES IETR CENTRALESUPELEC UR1-MATH-STIC UR1-UFR-ISTIC IETR-MM UNIV-RENNES INSA-GROUPE UR1-MATH-NUM NANTES-UNIVERSITE
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