Electrical injection in GaP-based laser waveguides and active areas - Archive ouverte HAL
Poster De Conférence Année : 2014

Electrical injection in GaP-based laser waveguides and active areas

Résumé

This paper presents the recent advances in device engineering towards the fabrication of an electrically pumped laser on GaP substrate for photonic integration on silicon. The letter first presents the electrical properties of a GaP-based PIN diode, in particular the reduction of the characteristic resistance of the p-contact, thanks to a judicious combination of metal choice and thermal annealing. Secondly, carrier injection in the active area is investigated by use of time-resolved photoluminescence, regarding particularly the nature and composition of the barrier and quantum wells materials, with a focus on the nitrogen incorporation issues.
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Dates et versions

hal-01114889 , version 1 (10-02-2015)

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Jean-Philippe Gauthier, Cédric Robert Robert, Samy Almosni, Charles Cornet, Yoan Léger, et al.. Electrical injection in GaP-based laser waveguides and active areas. 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), May 2014, Montpellier, France. IEEE, 26th International Conference on Indium Phosphide and Related Materials (IPRM 2014), pp.P23, 2014, ⟨10.1109/ICIPRM.2014.6880545⟩. ⟨hal-01114889⟩
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