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Communication Dans Un Congrès Année : 2014

Structure and spectroscopic properties of BN 1D and 2D nanostructures

Résumé

Hexagonal boron nitride (h-BN) is a wide band gap semiconductor (6.4 eV), which can be synthesized, as graphite, its carbon analog, as bulk crystallites, nanotubes and layers. These structures meet a growing interest for deep UV LED and graphene engineering. In this talk, we will review the interplay between the structure, defects and luminescence properties of different BN structures and how these properties can be further exploited for their characterization.

Domaines

Matériaux
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Dates et versions

hal-01111585 , version 1 (30-01-2015)

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  • HAL Id : hal-01111585 , version 1

Citer

A. Pierret, L. Schué, F. Fossard, S. Moldovan, O. Ersen, et al.. Structure and spectroscopic properties of BN 1D and 2D nanostructures. 4rd International Workshop NPO2014, Jul 2014, JOENSUU, Finland. ⟨hal-01111585⟩
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