Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE
Résumé
Deep dry etching of shallow features in high Al content AlGaAsSb can be achieved using Cl2/N2/Ar
chemistries. Good performances are achieved provided that the etching regime (ICP or RIE) is chosen in
accordance with the designed geometry and aspect ratio, and devices with good opto-electrical
performances were fabricated.
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