Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE

Résumé

Deep dry etching of shallow features in high Al content AlGaAsSb can be achieved using Cl2/N2/Ar chemistries. Good performances are achieved provided that the etching regime (ICP or RIE) is chosen in accordance with the designed geometry and aspect ratio, and devices with good opto-electrical performances were fabricated.
Fichier principal
Vignette du fichier
Poster_MNE2014_Adelin.pdf (3.45 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-01102417 , version 1 (12-01-2015)

Identifiants

  • HAL Id : hal-01102417 , version 1

Citer

Brice Adelin, Quentin Gaimard, Alexandre Larrue, Aurélie Lecestre, Pascal Dubreuil, et al.. Dry Etching of High [Al] AlGaAsSb Compounds Using Cl 2 /N 2 /Ar ICP RIE. International Conference on Micro and Nano Engineering ( MNE ) 2014, Sep 2014, Lausanne, Switzerland. ⟨hal-01102417⟩
273 Consultations
179 Téléchargements

Partager

Gmail Facebook X LinkedIn More