a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer - Archive ouverte HAL Access content directly
Conference Papers Year : 2014

a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer

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hal-01099577 , version 1 (04-01-2015)

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  • HAL Id : hal-01099577 , version 1

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Alexander Gudovskikh, E.V. Nikitina, Jean-Paul Kleider. a-Si:H/c-Si heterojunction interface properties from Hall measurements of surface inversion layer. E-MRS Spring Meeting 2014, European Materials Research Society, May 2014, Lille, France. ⟨hal-01099577⟩
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