Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
Résumé
Most of the works about single-photon detectors rely on Single PhotonAvalanche Diodes (SPADs) designed with dedicated technological processes in order toachieve single-photon sensitivity and excellent timing resolution. Instead, this paperfocuses on the implementation of high-performance SPADs detectors manufactured in astandard 0.35-micron opto-CMOS technology provided by AMS. We propose a series oflow-noise SPADs designed with a variable pitch from 20 μm down to 5 μm. This opens thefurther way to the integration of large arrays of optimized SPAD pixels with pitch of a fewmicrometers in order to provide high-resolution single-photon imagers. We experimentallydemonstrate that a 20-micron SPAD appears as the most relevant detector in terms ofSignal-to-Noise ratio, enabling emergence of large arrays of SPAD.
Origine | Publication financée par une institution |
---|
Loading...