The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2011

The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films

Résumé

Ferroelectric thin films are attractive materials for tunable microwave devices such as electrically tunable filters, capacitors, oscillators, resonators or phase shifters. For this type of application, the ferroelectric material needs to have a high dielectric permittivity and low losses. These dielectric properties are very sensitive to the quality of the material structure and more particularly to defects. In ferroelectric perovskite materials, oxygen vacancies are the most important defects that create conduction in the film. Hence the losses are important and it becomes necessary to dope the film in order to decrease the influence of the defects. In the present work, Mn-doped Ba0,80Sr0,20TiO3 (BST) thin films are realized by Chemical Solution Deposition (CSD) on stainless steel substrates. Dielectric and electrical characteristics are investigated as a function of the Mn content.
Fichier non déposé

Dates et versions

hal-01091873 , version 1 (07-12-2014)

Identifiants

  • HAL Id : hal-01091873 , version 1

Citer

Caroline Borderon, Raphaël Renoud, Hartmut Gundel. The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films. International Symposium on Integrated Functionalities 2011 - ISIF 2011, Jul 2011, Cambridge, United Kingdom. ⟨hal-01091873⟩
106 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More