A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs - Archive ouverte HAL Access content directly
Conference Papers Year : 2013

A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

Siconolfi Sara
  • Function : Author
Hubert Guillaume
  • Function : Author
Artola Laurent
  • Function : Author
David Jean Pierre
  • Function : Author

Abstract

This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
Not file

Dates and versions

hal-01091195 , version 1 (04-12-2014)

Identifiers

Cite

Siconolfi Sara, Hubert Guillaume, Artola Laurent, Frédéric Darracq, David Jean Pierre. A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2013, Oxford, United Kingdom. pp.1-4, ⟨10.1109/RADECS.2013.6937442⟩. ⟨hal-01091195⟩
72 View
0 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More