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Communication Dans Un Congrès Année : 2013

A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs

Siconolfi Sara
  • Fonction : Auteur
Hubert Guillaume
  • Fonction : Auteur
Artola Laurent
  • Fonction : Auteur
David Jean Pierre
  • Fonction : Auteur

Résumé

This paper investigates SEB physical/device mechanisms in power MOSFETs, and proposes SEB prediction model. Investigations relied on 2D TCAD simulations. Calculated SEB risk for IRF360 is consistent with ground experimental values and in-flight data.
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Dates et versions

hal-01091195 , version 1 (04-12-2014)

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Citer

Siconolfi Sara, Hubert Guillaume, Artola Laurent, Frédéric Darracq, David Jean Pierre. A physical prediction model issued from TCAD investigations for single event burnout in power MOSFETs. 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2013, Oxford, United Kingdom. pp.1-4, ⟨10.1109/RADECS.2013.6937442⟩. ⟨hal-01091195⟩
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