Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption

Résumé

We used two-photon absorption laser testing to characterize the effect of short-term NBTI aging on the SEU sensitivity of 65 nm CMOS SRAM cell. Results indicate a fast increase of SEU sensitivity due to aging.
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Dates et versions

hal-01091193 , version 1 (04-12-2014)

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El Moukthari Issam, Vincent Pouget, Frédéric Darracq, Camille Larue, Dean Lewis, et al.. Analysis of Short-Term NBTI Effect on the Single-Event Upset Sensitivity of a 65nm SRAM using Two-Photon Absorption. 14th European Conference on Radiation and Its Effects on Components and Systems, Sep 2013, Oxford, United Kingdom. pp.1-6, ⟨10.1109/RADECS.2013.6937408⟩. ⟨hal-01091193⟩
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