From 65nm to 28nm Power Amplifiers for 60GHz Applications
Résumé
This talk presents 60 GHz transformer-coupled power amplifiers (PA) which are implemented in 65 nm and 28 nm bulk processes. First, design considerations are proposed for a 28 nm CMOS pseudo-differential PA and experimental results are discussed. Then, a highly linear 65 nm CMOS PA based on a new low-loss 8-way power combiner achieves 32.4 dB gain, 20 dBmPSAT and 20% peak PAE. Currently, it offers the highest ITRS figure of merit among 60 GHzPAs using silicon technology.