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Communication Dans Un Congrès Année : 2014

From 65nm to 28nm Power Amplifiers for 60GHz Applications

Résumé

This talk presents 60 GHz transformer-coupled power amplifiers (PA) which are implemented in 65 nm and 28 nm bulk processes. First, design considerations are proposed for a 28 nm CMOS pseudo-differential PA and experimental results are discussed. Then, a highly linear 65 nm CMOS PA based on a new low-loss 8-way power combiner achieves 32.4 dB gain, 20 dBmPSAT and 20% peak PAE. Currently, it offers the highest ITRS figure of merit among 60 GHzPAs using silicon technology.
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Dates et versions

hal-01088914 , version 1 (29-11-2014)

Identifiants

  • HAL Id : hal-01088914 , version 1

Citer

Anthony Ghiotto, Aurélien Larie, Eric Kerhervé, Bernardo Leite, Baudouin Martineau, et al.. From 65nm to 28nm Power Amplifiers for 60GHz Applications. 2014 IEEE International Symposium on Radio Frequency Integration Technology RFIT, IEEE, Aug 2014, Hefei, China. ⟨hal-01088914⟩
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