60 GHz 28 nm CMOS transformer-coupled power amplifier for WiGig applications - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Electronics Letters Année : 2014

60 GHz 28 nm CMOS transformer-coupled power amplifier for WiGig applications

Résumé

A 60 GHz power amplifier (PA) based on a 28 nm CMOS technology is presented for WiGig applications. It consists of a two-stage pseudo-differential common-source structure using low-power and low-Vt transistors, capacitive neutralisation for isolation enhancement and integrated transformers for impedance matching, power splitting, power combining and balanced-to-unbalanced transformation purposes. The output-stage transistors have a measured 1 dB output compression point (OCP1 dB) of 10.2 dBm, a 10.2 dB gain and a peak power added efficiency (PAE) as high as 35%. The fabricated PA achieves a 12 dBm OCP1 dB, a 15.3 dB gain and a peak PAE better than 20% while occupying a silicon active area of only 0.037 mm2.

Dates et versions

hal-01088908 , version 1 (29-11-2014)

Identifiants

Citer

Bernardo Leite, Eric Kerhervé, Anthony Ghiotto, Aurélien Larie, Baudouin Martineau, et al.. 60 GHz 28 nm CMOS transformer-coupled power amplifier for WiGig applications. Electronics Letters, 2014, 50 (20), pp.1451-1453. ⟨10.1049/el.2014.1979⟩. ⟨hal-01088908⟩
121 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More