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Article Dans Une Revue Thin Solid Films Année : 2012

Growth mechanism investigation of SnO2 thin films deposited by aerosol pyrolysis for biosensor applications: Importance of the thickness

Résumé

Transparent conductive oxide films are suitable sensitive layers for gas sensors and biosensors, provided that their intrinsic properties are controlled, notably considering their thickness dependence. The present paper reports on a study of the variation of some physical properties of polycrystalline Sb doped SnO2 films according to the film thickness. Films were deposited onto Si and glass substrates by aerosol pyrolysis. Their thickness was varied in a range of 20-280 nm. The electrical resistivity, the roughness, the optical constant, the microstructure and the texture were investigated. Correlated evolutions of the resistivity and the surface roughness are found in relation with the evolutions of both the microstructure and the texture. Two main successive growth steps were evidenced which are delimited by a critical film thickness. Below this thickness of approximately 100-120 nm, a strong dependence of physical properties with the thickness is evidenced whereas for thicker films no significant change is evidenced. A two-step growth model is proposed to explain this behaviour. This mechanism growth is to be considered in view of the integration of SnO2 films as sensitive layers in biosensors. Notably, in the case of biosensors based on the label-free electrochemical detection of biomolecules, it is recommended to use films with thicknesses ranging above the critical thickness value of 100-120 nm in order to obtain optimized, reproducible and comparable responses of biosensors. (c) 2012 Elsevier B.V. All rights reserved.

Dates et versions

hal-01067532 , version 1 (23-09-2014)

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Citer

V. Stambouli, M. Manesse, F. Ferrieu, L. Rapenne, Hervé Roussel, et al.. Growth mechanism investigation of SnO2 thin films deposited by aerosol pyrolysis for biosensor applications: Importance of the thickness. Thin Solid Films, 2012, 520 (11), pp.3878-3883. ⟨10.1016/j.tsf.2012.01.022⟩. ⟨hal-01067532⟩
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