Large area quasi-free standing monolayer graphene on 3C-SiC(111) - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Applied Physics Letters Année : 2011

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

C. Coletti
  • Fonction : Auteur
K. V. Emtsev
  • Fonction : Auteur
A. A. Zakharov
  • Fonction : Auteur
U. Starke
  • Fonction : Auteur

Résumé

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6 root 3 x 6 root 3)R30 degrees-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by x-ray photoemission spectroscopy and low energy electron diffraction. Atomic force microscopy and low energy electron microscopy demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers. (C) 2011 American Institute of Physics. [doi:10.1063/1.3618674]

Domaines

Matériaux

Dates et versions

hal-01067355 , version 1 (23-09-2014)

Identifiants

Citer

C. Coletti, K. V. Emtsev, A. A. Zakharov, T. Ouisse, D. Chaussende, et al.. Large area quasi-free standing monolayer graphene on 3C-SiC(111). Applied Physics Letters, 2011, 99 (8), pp.081904. ⟨10.1063/1.3618674⟩. ⟨hal-01067355⟩
76 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More