Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Microwave and Wireless Components Letters Année : 2014

Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range

Résumé

SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete -band.
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Dates et versions

hal-01059836 , version 1 (02-09-2014)

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Marina Deng, Laurent Poulain, Daniel Gloria, Thomas Quémerais, Pascal Chevalier, et al.. Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range. IEEE Microwave and Wireless Components Letters, 2014, 24, pp.649-651. ⟨10.1109/LMWC.2014.2331762⟩. ⟨hal-01059836⟩
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