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Article Dans Une Revue Journal of Applied Physics Année : 2014

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Alexandre Fiori
D. Araujo
Julien Delahaye
Thierry Grenet
Julien Pernot

Résumé

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white beam topography. The chemical composition and thickness of these so-called delta-doped structures have been studied by secondary ion mass spectrometry, transmission electron microscopy, and spectroscopic ellipsometry. Temperature-dependent Hall effect and four probe resistivity measurements have been performed on mesa-patterned Hall bars. The temperature dependence of the hole sheet carrier density and mobility has been investigated over a broad temperature range (6 K < T < 450 K). Depending on the sample, metallic or non-metallic behavior was observed. A hopping conduction mechanism with an anomalous hopping exponent was detected in the non-metallic samples. All metallic delta-doped layers exhibited the same mobility value, around 3.6 ± 0.8 cm2/Vs, independently of the layer thickness and the substrate type. Comparison with previously published data and theoretical calculations showed that scattering by ionized impurities explained only partially this low common value. None of the delta-layers showed any sign of confinement-induced mobility enhancement, even for thicknesses lower than 2 nm.
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Dates et versions

hal-01058487 , version 1 (03-05-2019)

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Citer

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, et al.. Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures. Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩
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