Modeling and simulation of AlxGayIn1-x-yAs/InP quaternary structure for photovoltaic - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue International Journal of Hydrogen Energy Année : 2014

Modeling and simulation of AlxGayIn1-x-yAs/InP quaternary structure for photovoltaic

Résumé

In this work, we have studied solar cells based on AlGaInAs/InP quaternary structure to describe the behavior of electronics components. To this end, we have developed a simulation program to study the gallium Ga and aluminum Al concentrations effect on respectively the lattice mismatch, the band gap energy, the absorption and the power delivered by the solar cell. This study allows us to compare between simulation and experimental results, once the cell parameters are optimized by a judicious choice of concentrations. This work allows us either to use nanotechnologies for solar cells.
Fichier non déposé

Dates et versions

hal-01058063 , version 1 (26-08-2014)

Identifiants

Citer

Abdelkader Aissat, M. El Bey, Rachid Bestam, Jean-Pierre Vilcot. Modeling and simulation of AlxGayIn1-x-yAs/InP quaternary structure for photovoltaic. International Journal of Hydrogen Energy, 2014, 39, pp.15287-15291. ⟨10.1016/j.ijhydene.2014.04.162⟩. ⟨hal-01058063⟩
95 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More