Enhanced efficiency by the effect of strain on the structure of a solar cell
Résumé
This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher indium concentration, the band gap energy decreases considerably. We found that the efficiency reaches 18% in a lattice-matched δ=50A. For a concentration x > 0.48, we have a compressive strain Δa/a > 0 which leads to a higher efficiency. For x=90%, δ=5 nm and a strain equal Δa/a= 3%, we achieved an efficiency of 27%. The results show that light conversion efficiency has considerably boosted by varying insulating strain values.
Domaines
Sciences de l'ingénieur [physics]
Origine : Publication financée par une institution
Licence : CC BY NC ND - Paternité - Pas d'utilisation commerciale - Pas de modification
Licence : CC BY NC ND - Paternité - Pas d'utilisation commerciale - Pas de modification