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Communication Dans Un Congrès Année : 2014

Enhanced efficiency by the effect of strain on the structure of a solar cell

Résumé

This paper is expected at the study of Ga1-xInxP/GaAs based solar cell. The effects of indium concentration, lattice parameter mismatch and thickness of the SiO2 insulating layer on the characteristics and efficiency of the Ga1-xInxP/GaAs structure were investigated. We noticed that for higher indium concentration, the band gap energy decreases considerably. We found that the efficiency reaches 18% in a lattice-matched δ=50A. For a concentration x > 0.48, we have a compressive strain Δa/a > 0 which leads to a higher efficiency. For x=90%, δ=5 nm and a strain equal Δa/a= 3%, we achieved an efficiency of 27%. The results show that light conversion efficiency has considerably boosted by varying insulating strain values.
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Origine : Publication financée par une institution
Licence : CC BY NC ND - Paternité - Pas d'utilisation commerciale - Pas de modification

Dates et versions

hal-01055040 , version 1 (26-08-2022)

Licence

Paternité - Pas d'utilisation commerciale - Pas de modification

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Citer

Abdelkader Aissat, Rachid Bestam, M. El Bey, Jean-Pierre Vilcot. Enhanced efficiency by the effect of strain on the structure of a solar cell. International Conference on Technologies and Materials for Renewable Energy, Environment and Sustainability, TMREES14, 2014, Beirut, Lebanon. pp.817-823, ⟨10.1016/j.egypro.2014.06.100⟩. ⟨hal-01055040⟩
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